Wz10150 datasheet 2n3904

Datasheet

Wz10150 datasheet 2n3904

NPN switching transistor 2N3904 DATA SHEET STATUS Notes 1. The product status of the device( s) described in datasheet this data sheet may have changed since this data sheet was published. EDA / CAD Models :. MMBT3904 2n3904 NPN switching transistor dbook, halfpage M3D088. small signal pnp transistor preliminary data silicon epitaxial planar npn transistor to- 92 package suitable for through- hole pcb assembly the npn complementary type is 2n3904 applications well suitable for tv and home appliance equipment small load switch 2n3904 transistor with. 2N3904BU Bipolar ( BJT) Transistor NPN 40V 200mA 300MHz 625mW Through Hole TO- 92- 3. wz10150 2N3903, com2ELECTRICAL CHARACTERISTICS ( TA = 25° C unless 2n3904 otherwise wz10150 noted) CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICS datasheet search. Please consult wz10150 the most recently issued datasheet data sheet before initiating or completing a design. Wz10150 datasheet 2n3904. 2N3903, 2N3904 2N3903 is a Preferred Device General Purpose Transistors wz10150 NPN Silicon Features • Pb− Free Package May be Available. Product data sheet Production This document contains the product specification. Power Dissipation vsAmbient Temperaturedatasheet search Semiconductors, Datasheet search site for Electronic Components , diodes , integrated circuits, datasheets other semiconductors. The G− Suffix Denotes a Pb− Free Lead Finish MAXIMUM RATINGS Rating Symbol Value 2n3904 Unit Collector− Emitter Voltage VCEO 40 Vdc Collector− Base Voltage VCBO 60 Vdc Emitter− Base Voltage VEBO 6. HTML wz10150 Datasheet: 2N3904 MMBT3904 PZT3904 Datasheet.


Datasheet

Features, Applications: NPN silicon planar switching transistors. Fast switching devices exhibiting short turn- off and low saturation voltage characteristics. DATA SHEET Product specification Supersedes data of 19. NPN switching transistor 2N3904 FEATURES • Low current ( max.

wz10150 datasheet 2n3904

200 mA) • Low voltage ( max. 2N3904 * MMBT3904 * * PZT3904 PD Total Device Dissipation Derate above 25° C 625 5. 0 mW mW/ ° C RθJC Thermal Resistance, Junction to Case 83.